l Fast Switching l Low ON Resistance(Rdson≤0.25Ω) l Low Gate Charge (Typical Data:22.7nC) l Low Reverse transfer capacitances(Typical:13pF) l 100% Single Pulse avalanch.

Power switch circuit of adaptor and charger. 250 V 14 A 100 W 0.20 Ω Absolute（TJ= 25℃ unless otherwise specif.

CS14N25 A0R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor.

CS14N25A0R

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